To date, SMA Fellows have published 366 articles in 289 journals while 51 articles have been accepted for publication in 43 journals. Some articles are listed under more than one category.

Graded InGaN Buffers for Strain Relaxation in InGaN/GaN Epilayers Grown on Sapphire Substrate

Journal Publications

1. Song T. L., Chua S. J., Fitzgerald E. A., Chen P. & Tripathy S., “Strain Relaxation in Graded InGaN/GaN Epilayers Grown on Sapphire”, Applied Physics Letters, Vol. 83, No. 8, pp. 1545-1547 (2003).
   
   
2. Song T. L., Chua S. J., Fitzgerald E. A., Chen P. & Tripathy S., “Characterization of Graded InGaN/GaN Epilayers Grown on Sapphire”, Journal Vacuum Science and Technology, Vol. A 22(2), pp. 287-292 (2004).

Mechanical Behavior of Bulk Metallic Glasses

Journal Publications

1. Lee M. L., Li Y., Feng Y. P. & Carter C. W., “Study of Frequency Dependence Modulus of Bulk Amorphous Alloys around the Glass Transition by Dynamic Mechanical Analysis”, Intermetallics, Vol. 10, Issues 11-12, pp. 1061-1064 (2002).
   
   
2. Lee M. L., Li Y., Feng Y. P. & Carter C. W., “Frequency-Dependent Complex Modulus at the Glass Transition in Pd40Ni10Cu30P20 Bulk Amorphous Alloys”, Physical Review B, Vol. 67, pp. 132201 (2003).

Conference Publication

Lee M. L., Li Y. & Carter C. W., “Mechanical Properties of La-based Bulk Amorphous Alloy and Composites”, Proceedings of MRS Fall 2002 Meeting.

Oxidation and Silicidation of Epitaxial SiGe Films

Journal Publications

1. Tan C. S., Choi W. K., Bera L. K., Pey K. L., Antoniadis D. A. & Fitzgerald E. A., “N2O Oxidation of Strained Si/Relaxed SiGe Heterostructure Grown by UHVCVD”, Solid State Electronics, Vol. 45, pp. 1945 (2001).
   
   
2. Zhao H. B., Pey K. L., Choi W. K., Chattopadhyay S., Fitzgerald E. A. & Antoniadis D. A., “Interfacial Reactions of Ni on Si1-xGex (x=0.2, 0.3) at Low Temperature by Rapid Thermal Annealing”, Vol. 92, No. 1, pp. 214-217 (2002).
   
   
3. Pey K. L., Choi W. K., Chattopadhyay S., Zhao H. B., Fitzgerald E. A., Antoniadis D. A. & Lee P. S., “Thermal Reaction of Nickel and Si0.75Ge0.25 Alloy”, Journal of Vacuum Science Technology A, Vol. 20, No. 6, pp. 1903 (2002).
   
   
4. Pey K. L., Choi W. K., Chattopadhyay S., Miron Y.,Fitzgerald E. A., Antoniadis D. A. & Ospowicz T., “On the Stability and Composition of Ni-Germanosilicided Si1-xGex Films”, Journal of Vacuum Science Technology B, Vol. 22, No. 2, pp. 852 (2004) (accepted).

Conference Publication

Jin L. J., Pey K. L., Choi W. K., Fitzgerald E. A., Antoniadis D. A., Pitera A. J., Lee M. L. & Chi D. Z., “Study of Nickel (Platinum) (Pt at.% = 0, 5, 10) Germanosilicide Formation using MicroRaman Spectroscopy”, Proceedings of Material Research Society 2004 Spring Meeting, pp. C4.3.1-C4.3.6, 1 August 2004.