To date, SMA Fellows have published 366 articles in 289 journals while 51 articles have been accepted for publication in 43 journals. Some articles are listed under more than one category.

Germanium Nanocrystal Growth and its Applications in Electronic Devices

Journal Publications

1. Choi W. K., Chim W. K., Heng C. L., Teo L. W., Ho V., Ng V., Antoniadis D. A. & Fitzgerald E. A., “Observation of Memory Effect in Germanium Nanocrystals Embedded in an Amorphous Silicon Oxide Matrix of a Metal-Insulator-Semiconductor Structure”, Applied Physics Letters, Vol. 80, No.11, pp. 2014 (2002).
   
   
2. Teo L. W., Choi W. K., Chim W. K., Ho V., Moey C. H., Tay M. S., Heng C. L., Lei Y., Antoniadis D. A. & Fitzgerald E. A., “Size Control and Charge Storage Mechanism of Germanium Nanocrystals in a Metal-Insulator-Semiconductor Structure”, Applied Physics Letters, Vol. 81, No. 19, pp. 3639-3641 (2002).
   
   
3. Ho V., Tay M. S., Moey C. H., Teo L. W., Choi W. K., Chim W. K., Heng C. L. & Lei Y., “Electrical Characterization of a Trilayer Germanium Nanocrystal Memory Devices”, Microelectronic Engineering, Vol. 66, pp. 33-38 (2003).
   
   
4. Heng C. L., Teo L. W., Ho V., Tay M. S., Lei Y., Choi W. K. & Chim W. K., “Effects of Rapid Thermal Annealing Time and Ambient Measurement Temperature on the Charge Storage Capability of a SiO2/Pure Ge/Rapid Thermal Oxide Memory Structure”, Microelectronic Engineering, Vol. 66, pp. 218-223 (2003).
   
   
5. Kan E. W. H., Choi W. K., Leoy C. C., Chim W. K., Antoniadis D. A. & Fitzgerald E. A., “Effect of Annealing Profile on Defect Annihilation, Crystallinity and Size Distribution of Germanium Nanodots”, Applied Physics Letters, Vol. 83, No. 10, pp. 2058-2060 (2003).
   
   
6. Ho V., Teo L. W., Choi W. K., Chim W. K., Tay M. S., Antoniadis D. A., Fitzgerald E. A., Du A. Y., Tung C. H., Liu R. & Wee A. T. S., “Effect of Germanium Concentration and Tunnel Oxide Thickness on Nanocrystal Formation and Charge Storage/Retention Characteristics of a Trilayer Memory Structure”, Applied Physics Letters, Vol. 83, No. 17, pp. 3558-3560 (2003).
   
   
7. Kan E. W. H., Choi W. K., Chim W. K., Fitzgerald E. A. & Antoniadis D. A., “Origin of Charge Trapping in Germanium Nanocrystal Embedded SiO2 System: Role of Interfacial Traps?”, Journal of Applied Physics, Vol. 95, No. 6, pp. 3148-3152 (2004).
   
   
8. Kan E. W .H., Leoy C. C., Choi W. K., Chim W. K., Chow S. Y. Fitzgerald E. A. & Antoniadis D. A., “Crystallinity Study of Germanium Nanodots Synthesized via the Reduction of Si0.54Ge0.46 Oxides”, Transactions of the Materials Research Society of Japan, Vol. 29, No. 1, pp. 107-110 (2004).
   
   
9. Ng T. H., Chim W. K., Choi W. K., Ho V., Teo L. W., Du A. Y. & Tung C. H., “Minimization of Germanium Penetration, Nanocrystal Formation, Charge Storage, and Retention in a Trilayer Memory Structure with Silicon Nitride/Hafnium Dioxide Stack as the Tunnel Dielectric”, Applied Physics Letters, Vol. 84, No. 22, pp. 4385-4387 (2004).
   
   
10. Chen Z., Lei Y., Chew H. G., Teo L. W., Choi W. K. & Chim W. K., “Synthesis of Germanium Nanodots on Silicon using an Anodic Alumina Membrane Mask”, Journal of Crystal Growth, Vol. 268, No. 3-4, pp. 560-563 (2004).
    
    
11. Ng T. H., Ho V., Teo L. W., Tay M. S., Koh B. H., Chim W. K., Choi W. K., Du A. Y. & Tung C. H., “Fabrication and Characterization of a Trilayer Germanium Nanocrystal Memory Device with Hafnium Dioxide as the Tunnel Dielectric”, Thin Solid Films, Vol. 462-463, pp. 46-50 (2004).
    
    
12. Kan E. W. H., Chim W. K., Lee C. H., Choi W. K. & Ng T. H., “Clarifying the Origin of Near-Infrared Electroluminescence Peaks for Nanocrystalline Germanium in Metal-Insulator-Silicon Structures”, Applied Physics Letters, Vol. 85, No. 12, pp. 2349 2351(2004).